engineering recuitment ISRO Scientist Electronics Mock Test Electronic Devices Carriers in Semiconductors
For intrinsic gallium arsenide, conductivity at room temperature is 10-6 (Ω-m)-1, the electron and hole motilities are, respectively 0.85 and 0.04 m2/V-s. The intrinsic carrier concentration n at room temperature is
1
7.0 × 1012 m-3
2
0.7 × 1012 m-3
3
7.0 × 10-12 m-3
4
0.7 × 10-12 m-3