The hall experiment is conducted on a semiconductor sample with thickness = 10 μm, length = 5 mm and width = 0.1 mm. A magnetic field of 10-4 Wb/cm2 is applied across the thickenss, current of 1 mA is applied across the length and the hall voltage is measured across the width as -2 mV. The majority charge carrier concentration is

1
3.125 × 1017 holes/cm3
2
3.125 × 1017 electrons/cm3
3
3.125 × 1016 electrons/cm3
4
6.25 × 1017 holes/cm3

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