engineering recuitment ISRO Scientist Electronics Mock Test Electronic Devices MOS Capacitor Depletion Layer Thickness
For a silicon p-channel MOS transistor for an n+ polysilicon gate with silicon dioxide thickness = 50 Å, Nd = 1 × 1018 cm-3 and fixed charge of 2 × 1010 qC/cm2, the value of threshold voltage will be:
(Assume : ϕmz = -0.1 V, \({_{r\left( {Si{O_2}} \right)}} = 3.9\), ϵ0 = 8.85 × 10-14 F/cm, kT = 0.0259 V, ni = 1.5 × 1010 and q = 1.6 × 10-19 C.)1
-1.85 V
2
1.85 V
3
3.9 V
4
-3.9 V