engineering recuitment ISRO Scientist Electronics Mock Test Electronic Devices Carriers in Semiconductors Intrinsic Fermi Level
If silicon is doped with phosphorus atoms at a concentration of 1015 cm-3 then, what will be the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T = 300 K?
The Thermal voltage (VT) is calculated as 25.9 mV at 300 K and the intrinsic carrier concentration is taken as 1.5 × 1010 cm-3.
1
0.1855 eV below the intrinsic Fermi level
2
0.2877 eV above the intrinsic Fermi level
3
0.2877 eV below the intrinsic Fermi level
4
0.1855 eV above the intrinsic Fermi level