Two indentical FETs each characterized by the parameters gm and rd are connected in parallel. The composite FET is then characterized by the parameters. 

1
\(\frac{{gm}}{2}and\;2\;{r_d}\)
2
\(\frac{{gm}}{2}and\frac{{{r_d}}}{2}\)
3
2 gm and rd/2
4
2 gm and 2rd

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