engineering recuitment HAL Management & Design Trainee Mock Test 2023 Electronic Devices Carrier Transport Carrier Diffusion
In an n-type gallium arsenide semiconductor at T = 300 K, the electron concentration varies linearly from 1 × 1018 to 7 × 1017 cm-3 over a distance of 0.1 cm.
The diffusion current density if the electron Diffusion Coefficient Dn = 200 cm2/s is:1
90 A/cm2
2
100 A/cm2
3
96 A/cm2
4
108 A/cm2