engineering recuitment HAL Management & Design Trainee Mock Test 2023 Electronic Devices PN Junction
Consider a silicon p-n junction at 300 K with dopant densities Na = 1018 /cm3, Nd = 1015 /cm3. Assuming ni = 1.5 × 1010 /cm3 and KT /q = 26 mV, the built-in potential barrier is
1
0.82 V
2
0.76 V
3
0.67 V
4
0.30 V