engineering recuitment GATE EE 2023-24 Test Series Power Electronics and Drives Power Semiconductor Diodes and Transistors Insulated Gate Bipolar Transistor
An IGBT is used to switch a resistive load of 5Ω from a dc supply of 350 V as shown in figure
The on state gate voltage VGE = 20 V.
For the IGBT, VGE(th) = 5V and transconductance gfs = 30. The power dissipation inside the device in the event of short circuit fault across the load is ______ (in kW)
1
95.4 kW
2
157.5 kW
3
172.5 kW
4
72.5 kW