Consider a MOS diode with metal-semiconductor work function difference ϕms = - 0.898 V, the work function of metal ϕm = 3.2 V, the electron affinity of the semiconductor χs = 3.25 V, semiconductor is doped to NA = 1015 cm-3. Then the energy gap of the semiconductor is _______eV. (Thermal voltage Vt = 0.0259 V and ni = 1.5 × 1010 cm-3)
1
0.5 eV
2
0.75 eV
3
1.12 eV
4
1.24 eV