Consider a silicon PN junction at room temperature with a p-type doping concentration of Na = 1018 cm-3. Determine n-type doping concentration such that the maximum electric field is 3 × 105 V/cm at reverse bias voltage of VR = 25 V.
1
1015 cm-3
2
2 × 1015 cm-3
3
1.16 × 1016 cm-3
4
1.36 × 1016 cm-3