engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices Carriers in Semiconductors Extrinsic Fermi Level
In a non-degenerate bulk semiconductor with electron density n = 1016 cm-3 , the value of EC - EFn = 200 meV, where EC and EFn denote the bottom of the conduction band energy and electron Fermi level energy, respectively. Assume thermal voltage as 26 meV and the intrinsic carrier concentration is 1010 cm-3 . For n = 0.5 × 1016 cm-3 , the closest approximation of the value of (EC − EFn), among the given options, is __________.
1
226 meV
2
174 meV
3
218 meV
4
182 meV