engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices PN Junction Junction Breakdown
Consider the I-V characteristics of a silicon diode shown in the figure below:
Which of the following statement is/are correct?
1
The diode is in forward-bias with applied voltage greater than cut in voltage.
2
The diode is lightly doped.
3
The diode is in breakdown due to the Zener breakdown mechanism
4
The diode is in breakdown due to the Avalanche breakdown mechanism