engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices Carrier Transport Carrier Drift
In the figure, \(\rm \ln{(r_i)}\) is plotted as a function of \(\rm 1/T\), where \(\rm r_i\) is the intrinsic resistivity of silicon, \(\rm T\) is the temperature, and the plot is almost linear
The slope of the line can be used to estimate
1
Band gap energy of silicon Eg
2
sum of electron and hole mobility in silicon μn + μp
3
reciprocal of the sum of electron and hole mobility in silicon (μn + μp)-1
4
intrinsic carrier concentration of silicon \(\rm (n _i)\)