engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices Carrier Transport Carrier Diffusion
A uniformly doped silicon npn BJT is forward biased at B-E junction and reverse biased at the C-B junction. For T = 300 K, the minority carrier electron concentration at the edge of depletion region base is about 1% of the majority carrier hole concentration. The minority carrier hole concentration at the edge of depletion region at emitter is ______
Given, NE = 1017 cm-3, NB = 1015 cm-3, NC = 1014 cm-3, ni = 1.5 × 1010 cm-31
1015 cm-3
2
1011 cm-3
3
2.25 × 103 cm-3
4
1013 cm-3