Consider an ideal long channel nMOSFET (enhancement-mode) with gate length 10 µm and width 100 µm. The product of electron mobility (µ_n) and oxide capacitance per unit area (C_OX) is µ_n C_OX = 1 mA/V² . The threshold voltage of the transistor is 1 V. For a gate-to-source voltage V_GS = [2 − sin (2t)] V and drain-to-source voltage V_DS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current is ________.