engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices MOS Capacitor Two Terminal MOS Structure
The slope of the ID vs. VGS curve of an n-channel MOSFET in linear regime is 10-3 Ω-1 at VDS = 0.1 V. For the same device, neglecting channel length modulation, the slope of the \(\sqrt {{I_D}}\) vs. VGS curve (in \(\sqrt A /V\)) under saturation regime is approximately ______
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