engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices MOSFET

Consider an ideal n-channel MOSFET with parameter L = 1.25 μm, μn = 650 cm2/V-s, Cox = 6.9 × 10-8 F/cm2, and Vth = 0.65 V. The channel width W such that ID(sat) = 4 mA for VGS = 5 V is:

1
5 μm
2
9 μm
3
11.8 μm
4
8.5 μm
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