engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices Carriers in Semiconductors Equilibrium Distribution of Electrons and Holes
A bar of Si is doped with acceptors as shown below. The doping density varies smoothly and monotonically in x-direction from NA ≪ ni at x = 0 to NA ≫ ni at x = L. Acceptor doping concentration at L/2 is \({N_a}\left( {\frac{L}{2}} \right) = {n_i}\) Around x = L, the acceptor profile becomes uniform. The donor density is zero everywhere. The electron concentration is highest in
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x = 0
2
0 < x < 1/2
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Uniform everywhere
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\(\frac{L}{2} < x < L\)