engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices Carriers in Semiconductors P-Type Semiconductor
A sample of GaAs doped with NA = 1017 cm-3. For GaAs intrinsic concentration is n = 2.2 × 106 cm-3, mobility of electron is μn = 5300 cm2/V-sec, and mobility of hole is μp = 230 cm2/V sec.
If the sample is illuminated such that the excess electron concentration is 1016 cm-3. What will the conductivity [in (Ω-cm)-1] of this sample, when the light is ON?
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