engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices Carrier Transport Carrier Diffusion
In a silicon sample at T = 300 K, the hole concentration varies linearly with distance according to the graph below.
Diffusion current density Jp = 0.175 A / cm2. Hole diffusion coefficient Dp = 17 cm2 / sec. The hole concentration P(0) is ________
1
4.872 × 1016 cm-3
2
5.128 × 1018 cm-3
3
2 × 1013 cm-3
4
2 × 1010 cm-3