An ideal MOS capacitor with p-type substrate has doping concentration of NA = 1.2 × 1015 cm-3, oxide capacitance Cox = 2 × 10-9 F/cm2, εsi = 1.04 × 10-12 F/cm. If the body terminal is grounded then the gate voltage required to produce a surface potential of 0.026 V at the semiconductor oxide layer interface will be _____V.
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