A p type semiconductor is in thermal equilibrium and has a hole concentration of 1018 cm-3 and an intrinsic carrier concentration of 1010 cm-3. The minority carrier lifetime is 2 × 10-7 s.

The change in the recombination rate of electrons if an excess electron concentration of δn = 1012 cm-3 exists is

1
5 × 1018 cm-3 s-1
2
5 × 1010 cm-3 s-1
3
5 × 108 cm-3 s-1
4
5 × 1015 cm-3 s-1

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