Pure Si at 300 K has equal electron (ne) and hole (nh) concentrations of 1.5 × 1016 m-3. Doping by indium increases nh to 3 × 1022 m-3. Calculate ne in the doped Si.
1
7.5 × 109 m-3
2
3 × 1022 m-3
3
1.5 × 1016 m-3
4
7.5 × 1019 m-3
Pure Si at 300 K has equal electron (ne) and hole (nh) concentrations of 1.5 × 1016 m-3. Doping by indium increases nh to 3 × 1022 m-3. Calculate ne in the doped Si.