engineering recuitment BEL Probationary Engineers Mock Test 2025 Electronic Devices Carriers in Semiconductors Carrier Drift
The resistivity of a uniformly doped n – type silicon sample is 0.5 Ω − cm. If the Electron mobility (μn) is 1250 cm2/V-s and the charge of an electron is 1.6 × 10−19 coulomb, the donor impurity concentration (ND) in the sample is
1
2 × 1016/𝑐𝑚3
2
2 × 1015/𝑐𝑚3
3
1 × 1016/𝑐𝑚3
4
2.5 × 1015/𝑐𝑚3