Which of the following statements is correct?
1
In an N-type semiconductor, the donar energy level is formed due to the trivalent dopant and it lies just below the valence band.
2
In a P-type semiconductor, the doner energy level is formed due to the pentavalent dopant and it lies just below the conduction band.
3
In an N-type semiconductor, the acceptor energy level is formed due to the pentavalent dopant and it lies just above the conduction band.
4
In a P-type semiconductor, the acceptor energy level is formed due to the trivalent dopant and it lies just above the valence band.