railway RRB JE (CBT I + CBT II) Mock Test 2024 Electronic Devices Carrier Transport Carrier Drift

In an n-type Si sample, the drift velocity of electrons is 40 m/s. Then the time taken for the electron to travel 10 μm distance in the Si sample is equal to

1

0.25 μs

2

0.5 μs

3

1 μs

4

4 μs

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