An n-type silicon bar 0.1 cm long and 100 μm2 cross-sectional area has a majority carrier concentration of 5 x 1020 /m3 and the carrier mobility is 0.13 m2/V-s at 300 K. If a charge of an electron is 1.6 X 10-19 coulomb, the resistance of the bar is
1
106 ohm
2
107 ohm
3
105 ohm
4
104 ohm