railway RRB JE (CBT I + CBT II) Mock Test 2024 Electronic Devices MOSFET

In a MOSFET, SiO2 breaks down breaks down at electric field of the order of 5 × 106 V/cm. For a gate oxide thickness 1000 Angstroms and channel thickness of 2 μm, what is the maximum VGS it can withstand?

1
5 V
2
10 V
3
100 V
4
None of the above
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