Consider a p+-n diode where the doping concentration in the p-region is significantly higher than in the n-region. In this configuration, the forward current primarily arises from hole injection across the junction.
\( I = I_s \left(e^{V / V_T} - 1\right) \)
For the given parameters: Calculate:
- \(N_D = 5 \times 10^{16} \, \text{cm}^{-3}\)
- \(D_p = 10 \, \text{cm}^2/\text{s}\)
- \(\tau_p = 0.1 \, \mu\text{s}\)
- \(A = 10^4 \, \mu\text{m}^2\)
- \(n_i = 1.5 \times 10^{10} \, \text{cm}^{-3}\)
- The reverse saturation current (\( I_s\) )
- The voltage ( V ) when \(I = 0.2 \, \text{mA}\)
Compute the diffusion capacitance (\(C_d\) ) at I = 0.2 mA
1
\( C_d = 0.7652 \, \text{nF} \)
2
\( C_d = 0.7752 \, \text{nF} \)
3
\( C_d = 0.7852 \, \text{nF} \)
4
\( C_d = 0.7952 \, \text{nF} \)