engineering recuitment ISRO Scientist Electronics Mock Test Analog Electronics Diodes and Its Applications
Consider a p+n Si junction at T= 300 K with NA = 1018/cm3 and ND = 1016/cm3. The minority carrier hole lifetime is τp = 100 nsec. The cross sectional Area of the junction is A = 10-4 cm2. The reverse saturation current in the diode under no-bias is [Assume ni = 1.5 ×1010/cm3 and Dp = 12 cm2/s]
1
3.94 × 10-11 A
2
3.94 × 10-15 A
3
2.47 × 10-11 A
4
2.47 × 10-15 A