engineering recuitment ISRO Scientist Electronics Mock Test Electronic Devices Junction Field Effect Transistor
For an n-channel silicon JFET with a = 2 × 10-4 cm and channel resistivity ρ = 5Ω –cm, μn = 1300 cm2/V-s and ε0 = 9 × 10-12 F/m, the pinch-off voltage, Vp, is nearly
1
2.30 V
2
2.85 V
3
3.25 V
4
3.90 V