engineering recuitment ISRO Scientist Electronics Mock Test Analog Electronics Field Effect Transistors
The PMOSFET circuit shown in the figure has VTP = -1.4 V, K’p = 25 μA/V2, L = 2 μm, λ = 0. If IDS = -0.1 mA and VDS = -2.4 V then the width of channel W and R are respectively:
1
16 μm and 66 kΩ
2
18 μm and 33 kΩ
3
16 μm and 33 kΩ
4
18 μm and 66 kΩ