engineering recuitment GATE EE 2023-24 Test Series Power Electronics and Drives Power Semiconductor Diodes and Transistors Insulated Gate Bipolar Transistor
Consider the switching circuit shown in figure (a) by modeling the circuit parasitic inductance as a lumped discrete value, LS. Assume the switch open for a long time before being turned on at t = t0. Assume the same diode switching characteristics are same as shown in figure (b), except that it is a fast recovery diode with t3 – t2 = 0.
Figure(a):
Figure(b):
The expression for the peak switching current in terms of the diode reverse recovery time (trr) is1
\(\frac{{{V_{in}}}}{{{L_s}}}{t_{rr}}\)
2
\(\frac{{{V_{in}}}}{{{L_s}}}{t_{rr}} - {I_0}\)
3
\(\frac{{{V_{in}}}}{{{L_s}}}{t_{rr}} + 2{I_0}\)
4
\(\frac{{{V_{in}}}}{{{L_s}}}{t_{rr}} + {I_0}\)