engineering recuitment GATE EE 2023-24 Test Series Power Electronics and Drives Power Semiconductor Diodes and Transistors Insulated Gate Bipolar Transistor
The IGBT (Insulated Gate Bipolar Transistor) used in the circuit has the following data:
TON = 3 μs, tOFF = 1.2 μs, Duty cycle (D) = 0.7, VCE(sat) = 2 V and fs = 1 kHz.
What are the switching power losses during turn-on and turn-off, respectively?
1
1.98 W and 1.7 W
2
2.2 W and 1.7 W
3
1.98 W and 0.792 W
4
2.2 W and 0.792 W