An abrupt silicon p-n junction consists of a p-type region containing 2 × 1016 / cm3 acceptors and an n-type region containing 1016/cm3 acceptors in addition to 1017/cm3 donors. The built in potential of the junction is ________ V.

Assume \(\frac{KT}{q}=26mV,~{{n}_{i}}={{10}^{10}}/c{{m}^{3}}\)

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