engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices Carriers in Semiconductors Compensated Semiconductors
Consider the following uniformly doped n-type Si sample of length 100 μm, maintained at T = 300K, \(\rm \mu _p = 400 \ \frac{cm^2}{v -sec}, n_i = 10^{10} cm^{-3}\)
Light incident on the surface is absorbed at x = 0, resulting in pn (0) - p0 = 108 / cm3 excess holes at x = 0. The generation rate for x > 0 is zero)
The expression for minority charge carrier (holes) as function of x is
1
\(\rm p_n(x) = 10^8 + 10^4 e^{-10^{-5}x} cm^{-3}\)
2
\(\rm p_n(x) = 10^4 + 10^8 e^{-10^{2}x} cm^{-3}\)
3
\(\rm p_n(x) = 10^4 - 10^8 e^{-10^{5}x} cm^{-3}\)
4
\(\rm p_n(x) = 10^8 -10^4 e^{-10^{-5}x} cm^{-3}\)