engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices Carriers in Semiconductors Equilibrium Distribution of Electrons and Holes
A silicon bar is doped with donor impurities ND = 2.25 × 1015 atoms / cm3. Given the intrinsic carrier concentration of silicon at T = 300 K is ni = 1.5 × 1010 cm-3. Assuming complete impurity ionization, the equilibrium electron and hole concentrations are
1
n0 = 1.5 × 1016 cm-3, p0 = 1.5 × 105 cm-3
2
n0 = 1.5 × 1010 cm-3, p0 = 1.5 × 1015 cm-3
3
n0 = 2.25 × 1015 cm-3, p0 = 1.5 × 1010 cm-3
4
n0 = 2.25 × 1015 cm-3, p0 = 1 × 105 cm-3