Consider an n-type gallium arsenide semiconductor at T = 300 K doped at Nd = 5 × 1016 cm-3 and intrinsic concentration ni = 1.8 × 106 cm-3.
The change in Fermi level, EF – EFi will be1
2.405 eV
2
-0.9284 eV
3
0.6228 eV
4
-0.6228 eV
Consider an n-type gallium arsenide semiconductor at T = 300 K doped at Nd = 5 × 1016 cm-3 and intrinsic concentration ni = 1.8 × 106 cm-3.
The change in Fermi level, EF – EFi will be