An ideal MOS capacitor (p-type semiconductor) is shown in the figure. The MOS capacitor is under strong inversion with VG = 2 V. The corresponding inversion charge density (QiN) is 2.2 μC/cm2. Assume oxide capacitance per unit area as COX = 1.7 μF/cm2. For VG = 4 V, the value of QIN is _______μC/cm2. (rounded off to one decimal place).
Enter numerical value using the virtual keypad. Round off where necessary.