engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices MOS Capacitor Flat Band Voltage
A MOS capacitor is fabricated on p-type Si (Silicon) where the metal work function is 4.1 eV and electron affinity of Si is 4.0 eV. EC - EF = 0.9 eV, where EC and EF are the conduction band minimum and the Fermi energy levels of Si, respectively. Oxide ϵr = 3.9, ϵo = 8.85 × 10-14 F/cm, oxide thickness tox = 0.1 μm and electronic charge q = 1.6 × 10-19 C. If the measured flat band voltage of this capacitor is -1 V, then the magnitude of the fixed charge at the oxide-semiconductor interface, in nC/cm2, is ________.
Enter numerical value using the virtual keypad. Round off where necessary.