An NMOS has Id = 5 mA, Vgs = 2 V, Vds = 4 V and Vt = 0.8 V. If the thickness of oxide is 500 A° , the aspect ratio of device at room temperature is ______.
Take the mobility of silicon as 0.13 m2/V-s and permittivity of silicon as ϵrox ≈ 12.
1
1.5
2
14
3
25
4
35