engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices MOS Capacitor Charge Distribution in the Mos Substrate
The high-frequency C-V characteristic curve of a MOS capacitor is shown in the figure.
The area of the device is 2 × 10-3 cm2. The metal-semiconductor work function difference is ϕms = - 0.50 V, the oxide is SiO2 with relative permittivity ϵr = 3.9, the semiconductor is silicon, and the semiconductor doping concentration is 2 × 1016 cm-3. The absolute permittivity ϵ0 = 8.85 × 10-14 F/cm.
1
The thickness of the oxide is 1345.5 Å
2
The thickness of the oxide is 345 Å
3
The equivalent trapped oxide charge density (electronic charge per cm2) is 5 × 1011 cm-2
4
The equivalent trapped oxide charge density (electronic charge per cm2) is 1.875 × 1011 cm-2