engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices PN Junction Space Charge Region
A uniformly doped p+n junction at T = 300 K is designed such that, at a reverse bias of VR = 10 V, the maximum electric field is limited to \(\left| {{E_{max}}} \right| = 2.5 \times {10^5}V/cm.\) The maximum doping concentration in the n-region is _________ × 1016 cm-3
(Up to 2-decimal places). (Take Vbi ≪ VR)
(ϵr = 11.7, ϵ0 = 8.854 × 10-14, e = 1.6 × 10-19C)Enter numerical value using the virtual keypad. Round off where necessary.