engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices PN Junction Junction with External Bias
A silicon P-N junction is shown in the figure. The doping in the P region is 5 × 1016 cm-3 and doping in the N region is 10 × 1016 cm-3. The parameters given are
Built-in voltage (Φbi) = 0.8 V
Electron charge (q) = 1.6 × 10-19 C
Vacuum permittivity (ε0) = 8.85 × 10-12 F / m
Relative permittivity of silicon (εSi) = 12
The magnitude of reverse bias voltage that would completely deplete one of the two regions (P or N) prior to the other (rounded off to one decimal place) is _______ V.
Enter numerical value using the virtual keypad. Round off where necessary.