engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices Bipolar Junction Transistor Minority Carrier Distribution
The doping concentrations on the p-side and n-side of a silicon diode are 1 × 1016 cm-3 and 1 × 1017 cm-3, respectively. The forward bias of 0.3 V is applied to the diode. At T = 300 K, the intrinsic carrier concentration of silicon ni = 1.5 × 1010 and \(\frac{{kT}}{q} = 26\;mV\). The electron concentration at the edge of the depletion region p-side is
1
2.3 × 109 cm-3
2
1 × 1016 cm-3
3
1 × 1017 cm-3
4
2.25 × 106 cm-3