Consider an n-channel MOSFET having width W, length L, electron mobility in the channel μn and oxide capacitance per unit area Cox. If gate-to-source voltage VGS = 0.7 V, drain-to-source voltage VDS = 0.1 V, (μn Cox) = 100 μA/V2, threshold voltage VTH = 0.3 V and (W/L) = 50, then the transconductance gm (in mA/V) is ____________