engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices Carrier Transport Carrier Drift
An n–type silicon sample of 10–3 m length and 10–10 m2 cross sectional area has an impurity concentration of 5 × 1020 atom/m3. If mobility of majority carries is 0.125 m2/v-sec, then the resistance of the sample will be ________.
1
4 MΩ
2
1 MΩ
3
25 kΩ
4
5 kΩ