The semiconductor has the following properties Dn= 25 cm/s2 ,Dp= 9 cm/s2 , τn =10-6 s , τp =10-8 s .The semiconductor is homogeneous p type (Na=1017 cm-3) under equilibrium for t\(\leq\)0.The semiconductor is exposed to light at t = 0 and carriers are generated at the rate of g=1020 cm-3s-1. At t = 2 × 10-6 s the light is turned off.(ni = 1010 cm-3).
Calculate the excess electron concentration at t = infinity.
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