An n-channel MOS device in a technology for which oxide thickness is 20 nm, aspect ratio to be maintained as 2.5. The Vt = 0.8 V operates in the triodes region, with small VDS and VGs = +5 V. What will be the electron mobility (μn) needed to ensure that the minimum available drain resistance is 1 kΩ. [ϵr (SiO2) = 3.9, ϵ0 = 8.854 × 10-14 F/cm] _____\(\left[ \dfrac{\rm{cm}^2}{V-\rm{sec}} \right]\)
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