engineering recuitment GATE ECE 2023-24 Test Series Electronic Devices Bipolar Junction Transistor Basic Principle of Operation
An NPN silicon bipolar transistor at T = 300 K has uniform dopings of NE = 1019 cm-3, NB = 1017 cm-3 and NC = 7 × 1015 cm-3. The transistor is operating in the inverse-active mode with VBE = -2 V and VBC = 0.565 V. The intrinsic carrier concentration at T = 300 K is 1.5 × 1010 cm-3, ϵ (ϵr ϵ0) = 10-12 F/m, and the Thermal Voltage (VT) = 25.9 mV.
If the metallurgical base width (separation between the emitter-base and Collector Base junctions) is 1.2 μm, the neutral base width of the transistor will be ______ μm. (Up to three decimal places)Enter numerical value using the virtual keypad. Round off where necessary.